O. Shpotyuk, M. Vakiv, A. Koval’skii, E. Skordeva, E. Vateva, D. Arsova, R. Golovchak, and R. Lutsiv.
Glass Physics and Chemistry, vol. 26, No. 3, 2000, p. 260-264.
Abstract
The radiation-optical properties of vitreous semiconductors in the Ge-As-S system are studied near the 2D-3D topological phase transition. The results obtained are interpreted within the framework of the model of coordination defect centers, which are characteristic of chalcogenide vitreous semiconductors.
