Radiation-induced defects in vitreous chalcogenide semiconductors studied by positron annihilation method

O. Shpotyuk, J. Filipecki.

Materials Science and Engineering B, vol. 91–92, 2002, p. 537–540.

Abstract

The defect formation process in vitreous chalcogenide semiconductors (VChS) of the ternary As–Ge–S system, induced by 60Co γ-irradiation with 2.82 MGy absorbed dose, is studied using positron annihilation lifetime method. The measured results are explained in terms of a modified model of coordination topological defects (CTD) with associated open volume microvoids, described by radiation-structural transformations at the level of both short-, and medium-range ordering.

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