Radiation-induced defects in chalcogenide glasses characterized by combined optical spectroscopy, XPS and PALS methods

O. Shpotyuk, A. Kovalskiy, R. Golovchak, A. Zurawska, and H. Jain.

Physica status solidi (c), vol. 4, No. 3, 2007, p. 1147–1150.

Abstract

Temperature-dependent optical absorption spectroscopy, high-resolution X-ray photoelectron spectroscopy and positron annihilation lifetimes spectroscopy are utilized to understand radiation-induced changes in Ge–Sb–S chalcogenide glasses. Theoretically predicted topological scheme of γ-induced coordination defect formation in stoichiometric Ge23.5Sb11.8S64.7 glass composition is supported by these measurements.

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