O. Shpotyuk, A. Kovalskiy, R. Golovchak, A. Zurawska, and H. Jain.
Physica status solidi (c), vol. 4, No. 3, 2007, p. 1147–1150.
Temperature-dependent optical absorption spectroscopy, high-resolution X-ray photoelectron spectroscopy and positron annihilation lifetimes spectroscopy are utilized to understand radiation-induced changes in Ge–Sb–S chalcogenide glasses. Theoretically predicted topological scheme of γ-induced coordination defect formation in stoichiometric Ge23.5Sb11.8S64.7 glass composition is supported by these measurements.