O. Shpotyuk, J. Filipecki, A. Kozdras, T.S. Kavetskyy.
Journal of Non-Crystalline Solids, vol. 326&327, 2003, p. 268–272.
Abstract
The modified model of native and radiation-induced microvoid-type positron traps in vitreous chalcogenide semiconductors is developed to explain compositional features of positron annihilation lifetime measurements in stoichiometric As2S3–GeS2 and non-stoichiometric As2S3–Ge2S3 chalcogenide glasses before and after γ-irradiation.
