O. Shpotyuk, A. Kovalskiy, T. Kavetskyy, R. Golovchak.
Journal of Optoelectronics and Advanced Materials, vol. 5, No. 5, 2003, p. 1169 – 1179.
The influence of thermal annealing temperature Tα on the radiation-induced optical effects (RIOEs) control parameter χ(hν)=Δα/α0(hν) (where α0 and α are respectively the values of optical absorption coefficient before and 3 months after the γ-irradiation, hν is the photon energy) is studied for some chalcogenide glasses of As–Sb–S, Ge–As–S and Ge–Sb–S ternary systems on pseudobinary ‘stiochiometric’ As2S3–Sb2S3, As2S3–GeS2, Sb2S3–GeS2 and ‘non-stoichiometric’ As2S3–Ge2S3, Sb2S3–Ge2S3 cut-sections. The compositional features of the apparent activation energies obtained from different ranges of lnχ=ƒ(103/Tα) dependence are analyzed. Interpretation of the form of lnχ=ƒ(103/Tα) curve in various Tα regions is given for the first time in detail. Possible mechanisms of the observed post-irradiation thermally stimulated restoration (ThSR) effects are also considered.