Positron lifetime study of native vacancy-like defects in chalcogenide glasses

J. Filipecki, O. Shpotyuka, A. Kozdras, A. Kovalskiy.

Radiation Physics and Chemistry, vol. 68, 2003, p. 557–559.

Abstract

Modified model for positron annihilation in vitreous chalcogenide semiconductors is developed to explain a number of previously obtained results on positron lifetime measurements in glassy As–Ge–S of stoichiometric As2S3–GeS2 and non-stoichiometric As2S3–Ge2S3 cut-sections.

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