Peculiarities of γ-induced optical effects in ternary systems of amorphous chalcogenide semiconductors

A. Kovalskiy.

Journal of Optoelectronics and Advanced Materials, vol. 3, No. 2, 2001, p. 323-327.

Abstract

Changes of optical transmittance induced by the influence of 60Co γ-irradiation have been studied in ternary As-Ge-S, Sb-Ge-S, As-Ge-Se and As-Bi-Se systems. The characters of radiation-induced optical effects in all these systems have been compared It was shown that the compositional dependencies of such effects are almost linear for stoichiometric glasses and reveal some peculiarities connected with phase features, the “free volume” parameters and the specificity of radiation induced defects formation for non-stoichiometric families.

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