Coordination positron-trapping centers in vitreous chalcogenide semiconductors

O. Shpotyuk, J. Filipecki, A. Kozdras, and A. Kovalskiy.

Physica status solidi (c), vol. 0, No. 2, 2003, p. 795–798.

Abstract

A model of radiation-induced coordination topological defects with an associate open volume is developed in order to explain the experimental results on positron annihilation lifetime measurements in γ-irradiated vitreous chalcogenide semiconductors of the ternary As–Ge–S system. It is shown that, contrary to the native open-volume microvoids frozen technologically at thermodynamic equilibrium near a glass transition, the principally different part of void-type defects can be created as a result of 60Co γ-irradiation. They are associated mainly with structural transformations (atomic displacements) at the medium-range ordering level in the nearest vicinity of some metastable atomic configurations, especially those containing the negatively charged coordination topological defects.

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