O. Shpotyuka, J. Filipeckib, M. Hyla, A. Kovalskiy, R. Golovchak.
Physica B, vol. 308–310, 2001, p. 1011–1014.
Defect formation processes in chalcogenide vitreous semiconductors of the ternary As-Ge-S system, induced by the 60Co γ-irradiation with 2.82 MGy absorbed dose, are studied using positron lifetime measurements. The obtained results are explained at the level of both short- and medium-range ordering in the framework of coordination topological defects model modified with free-volume microvoids formation.