Coordination defects in chalcogenide amorphous semiconductors studied by positron annihilation lifetime

O. Shpotyuka, J. Filipeckib, M. Hyla, A. Kovalskiy, R. Golovchak.

Physica B, vol. 308–310, 2001, p. 1011–1014.

Abstract

Defect formation processes in chalcogenide vitreous semiconductors of the ternary As-Ge-S system, induced by the 60Co γ-irradiation with 2.82 MGy absorbed dose, are studied using positron lifetime measurements. The obtained results are explained at the level of both short- and medium-range ordering in the framework of coordination topological defects model modified with free-volume microvoids formation.

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