Charged defects in chalcogenide vitreous semiconductors studied with combined Raman scattering and PALS methods

T. Kavetskyy, M. Vakiv, O. Shpotyuk.

Radiation Measurements, vol. 42, 2007, p. 712–714.

Abstract

A combination of Raman scattering and positron annihilation lifetime spectroscopy (PALS) techniques to study charged defects in chalcogenide vitreous semiconductors (ChVSs) was applied for the first time in this study. In the case of Ge15.8As21S63.2 glass, it is found that the main radiation-induced switching of heteropolar Ge–S bonds into heteropolar As–S ones, previously detected by IR fast Fourier transform spectroscopy, can also be identified by Raman spectroscopy in the depolarized configuration. Results obtained by Raman scattering are in good agreement with PALS data for the investigated glass composition.

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